Pecularities of Hall effect in GaAs/δ?Mn?/GaAs/InxGa1-xAs/ GaAs (x ≃ 0.2) heterostructures with high Mn content
Identifieur interne : 000036 ( Russie/Analysis ); précédent : 000035; suivant : 000037Pecularities of Hall effect in GaAs/δ?Mn?/GaAs/InxGa1-xAs/ GaAs (x ≃ 0.2) heterostructures with high Mn content
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Abstract
The transport properties of GaAs/δ?Mn?/GaAs/InxGa1-xAs/GaAs structures containing an InxGa1-xAs (x ≃ 0.2) quantum well (QW) and a Mn delta layer (DL) with relatively high content, about one Mn monolayer (ML), are studied. In these structures the DL is separated from the QW by GaAs spacer with thickness ds = 2-5 nm. All structures possess a non-metallic character of conductivity and display a maximum in the resistance temperature dependence Rxx(T) at the temperature ≃46 K, which is usually associated with the Curie temperature Tc of ferromagnetic (FM) transition in DL. However, it is found that the Hall effect concentration of holes pH in the QW does not decrease below Tc as one ordinary expects in similar systems. On the contrary, the dependence pH(T) experiences a minimum at T = 80-100 K depending on the spacer thickness, then increases at low temperatures more strongly when ds is smaller, and reaches a giant value pH = (1-2) × 1013 cm-2. The obtained results are interpreted in the terms of magnetic proximity effect of the DL on the QW, inducing spin polarization of the holes in the QW. Strong structural and magnetic disorder in the DL and in the QW, leading to phase segregation in them is taken into consideration. The high pH value is explained as a result of the compensation of the positive normal Hall effect component by the negative anomalous Hall effect component.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Pecularities of Hall effect in GaAs/δ?Mn?/GaAs/In<sub>x</sub>Ga<sub>1-x</sub>As/ GaAs (x ≃ 0.2) heterostructures with high Mn content</title><author><name sortKey="Pankov, M A" uniqKey="Pankov M">M. A. Pankov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Russian Research Centre "Kurchatov Institute"</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Aronzon, B A" uniqKey="Aronzon B">B. A. Aronzon</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Russian Research Centre "Kurchatov Institute"</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Applied and Theoretical Electrodynamics, Russian Academy of Sciences</s1><s2>127412 Moscow</s2><s3>RUS</s3><sZ>2 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Rylkov, V V" uniqKey="Rylkov V">V. V. Rylkov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Russian Research Centre "Kurchatov Institute"</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Kotel'nikov Institute of Radio Engineering and Electronics, RAS</s1><s2>Fryazino, 141190 Moscow District</s2><s3>RUS</s3><sZ>3 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Fryazino, 141190 Moscow District</wicri:noRegion></affiliation></author><author><name sortKey="Davydov, A B" uniqKey="Davydov A">A. B. Davydov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Russian Research Centre "Kurchatov Institute"</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Tugushev, V V" uniqKey="Tugushev V">V. V. Tugushev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Russian Research Centre "Kurchatov Institute"</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Caprara, S" uniqKey="Caprara S">S. Caprara</name><affiliation wicri:level="4"><inist:fA14 i1="03"><s1>Dipartimento di Fisica, Università di Roma "La Sapienza", piazzale Aldo Moro</s1><s2>2-00185 Roma</s2><s3>ITA</s3><sZ>6 aut.</sZ></inist:fA14><country>Italie</country><placeName><settlement type="city">Rome</settlement><region nuts="2">Latium</region></placeName><orgName type="university">Université de Rome « La Sapienza »</orgName><placeName><settlement type="city">Rome</settlement><region type="region" nuts="2">Latium</region></placeName></affiliation></author><author><name sortKey="Likhachev, I A" uniqKey="Likhachev I">I. A. Likhachev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Russian Research Centre "Kurchatov Institute"</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Pashaev, E M" uniqKey="Pashaev E">E. M. Pashaev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Russian Research Centre "Kurchatov Institute"</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Chuev, M A" uniqKey="Chuev M">M. A. Chuev</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute of Physics and Technology of RAS, Nakhimovskii Avenue 34</s1><s2>117218 Moscow</s2><s3>RUS</s3><sZ>9 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="L Hderanta, E" uniqKey="L Hderanta E">E. L Hderanta</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Lappeenranta University of Technology, Box 20</s1><s2>53851 Lappeenranta</s2><s3>FIN</s3><sZ>10 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>53851 Lappeenranta</wicri:noRegion></affiliation></author><author><name sortKey="Vedeneev, A S" uniqKey="Vedeneev A">A. S. Vedeneev</name><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Kotel'nikov Institute of Radio Engineering and Electronics, RAS</s1><s2>Fryazino, 141190 Moscow District</s2><s3>RUS</s3><sZ>3 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Fryazino, 141190 Moscow District</wicri:noRegion></affiliation></author><author><name sortKey="Bugaev, A S" uniqKey="Bugaev A">A. S. Bugaev</name><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Kotel'nikov Institute of Radio Engineering and Electronics, RAS</s1><s2>Fryazino, 141190 Moscow District</s2><s3>RUS</s3><sZ>3 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Fryazino, 141190 Moscow District</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0334872</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0334872 INIST</idno><idno type="RBID">Pascal:12-0334872</idno><idno type="wicri:Area/Main/Corpus">001950</idno><idno type="wicri:Area/Main/Repository">001723</idno><idno type="wicri:Area/Russie/Extraction">000036</idno></publicationStmt><seriesStmt><idno type="ISSN">1434-6028</idno><title level="j" type="abbreviated">Eur. phys. j., B Cond. matter phys. : (Print)</title><title level="j" type="main">The European physical journal. B, Condensed matter physics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anomalous Hall effect</term><term>Curie point</term><term>Ferromagnetism</term><term>Gallium Indium Arsenides Mixed</term><term>Gallium arsenides</term><term>Hall effect</term><term>Heterostructures</term><term>Magnetic transitions</term><term>Manganese additions</term><term>Percolation</term><term>Phase separation</term><term>Planar doping</term><term>Quantum wells</term><term>Segregation</term><term>Spin polarization</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet Hall</term><term>Dopage plan</term><term>Addition manganèse</term><term>Ferromagnétisme</term><term>Point Curie</term><term>Transition magnétique</term><term>Ségrégation</term><term>Séparation phase</term><term>Polarisation spin</term><term>Percolation</term><term>Gallium Indium Arséniure Mixte</term><term>Effet Hall anormal</term><term>Arséniure de gallium</term><term>Hétérostructure</term><term>Puits quantique</term><term>GaAs</term><term>InxGa1-xAs</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The transport properties of GaAs/δ?Mn?/GaAs/In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs structures containing an In<sub>x</sub>Ga<sub>1-x</sub>As (x ≃ 0.2) quantum well (QW) and a Mn delta layer (DL) with relatively high content, about one Mn monolayer (ML), are studied. In these structures the DL is separated from the QW by GaAs spacer with thickness d<sub>s</sub> = 2-5 nm. All structures possess a non-metallic character of conductivity and display a maximum in the resistance temperature dependence R<sub>xx</sub>(T) at the temperature ≃46 K, which is usually associated with the Curie temperature T<sub>c</sub> of ferromagnetic (FM) transition in DL. However, it is found that the Hall effect concentration of holes p<sub>H</sub> in the QW does not decrease below Tc as one ordinary expects in similar systems. On the contrary, the dependence p<sub>H</sub>(T) experiences a minimum at T = 80-100 K depending on the spacer thickness, then increases at low temperatures more strongly when d<sub>s</sub> is smaller, and reaches a giant value p<sub>H</sub> = (1-2) × 10<sup>13</sup> cm<sup>-2</sup>. The obtained results are interpreted in the terms of magnetic proximity effect of the DL on the QW, inducing spin polarization of the holes in the QW. Strong structural and magnetic disorder in the DL and in the QW, leading to phase segregation in them is taken into consideration. The high p<sub>H</sub> value is explained as a result of the compensation of the positive normal Hall effect component by the negative anomalous Hall effect component.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1434-6028</s0></fA01><fA03 i2="1"><s0>Eur. phys. j., B Cond. matter phys. : (Print)</s0></fA03><fA05><s2>85</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Pecularities of Hall effect in GaAs/δ?Mn?/GaAs/In<sub>x</sub>Ga<sub>1-x</sub>As/ GaAs (x ≃ 0.2) heterostructures with high Mn content</s1></fA08><fA11 i1="01" i2="1"><s1>PANKOV (M. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>ARONZON (B. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>RYLKOV (V. V.)</s1></fA11><fA11 i1="04" i2="1"><s1>DAVYDOV (A. B.)</s1></fA11><fA11 i1="05" i2="1"><s1>TUGUSHEV (V. V.)</s1></fA11><fA11 i1="06" i2="1"><s1>CAPRARA (S.)</s1></fA11><fA11 i1="07" i2="1"><s1>LIKHACHEV (I. A.)</s1></fA11><fA11 i1="08" i2="1"><s1>PASHAEV (E. M.)</s1></fA11><fA11 i1="09" i2="1"><s1>CHUEV (M. A.)</s1></fA11><fA11 i1="10" i2="1"><s1>LÄHDERANTA (E.)</s1></fA11><fA11 i1="11" i2="1"><s1>VEDENEEV (A. S.)</s1></fA11><fA11 i1="12" i2="1"><s1>BUGAEV (A. S.)</s1></fA11><fA14 i1="01"><s1>Russian Research Centre "Kurchatov Institute"</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Applied and Theoretical Electrodynamics, Russian Academy of Sciences</s1><s2>127412 Moscow</s2><s3>RUS</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Dipartimento di Fisica, Università di Roma "La Sapienza", piazzale Aldo Moro</s1><s2>2-00185 Roma</s2><s3>ITA</s3><sZ>6 aut.</sZ></fA14><fA14 i1="04"><s1>Institute of Physics and Technology of RAS, Nakhimovskii Avenue 34</s1><s2>117218 Moscow</s2><s3>RUS</s3><sZ>9 aut.</sZ></fA14><fA14 i1="05"><s1>Lappeenranta University of Technology, Box 20</s1><s2>53851 Lappeenranta</s2><s3>FIN</s3><sZ>10 aut.</sZ></fA14><fA14 i1="06"><s1>Kotel'nikov Institute of Radio Engineering and Electronics, RAS</s1><s2>Fryazino, 141190 Moscow District</s2><s3>RUS</s3><sZ>3 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></fA14><fA20><s2>206.1-206.11</s2></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>26688</s2><s5>354000506660240340</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>47 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0334872</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>The European physical journal. B, Condensed matter physics : (Print)</s0></fA64><fA66 i1="01"><s0>FRA</s0></fA66><fC01 i1="01" l="ENG"><s0>The transport properties of GaAs/δ?Mn?/GaAs/In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs structures containing an In<sub>x</sub>Ga<sub>1-x</sub>As (x ≃ 0.2) quantum well (QW) and a Mn delta layer (DL) with relatively high content, about one Mn monolayer (ML), are studied. In these structures the DL is separated from the QW by GaAs spacer with thickness d<sub>s</sub> = 2-5 nm. All structures possess a non-metallic character of conductivity and display a maximum in the resistance temperature dependence R<sub>xx</sub>(T) at the temperature ≃46 K, which is usually associated with the Curie temperature T<sub>c</sub> of ferromagnetic (FM) transition in DL. However, it is found that the Hall effect concentration of holes p<sub>H</sub> in the QW does not decrease below Tc as one ordinary expects in similar systems. On the contrary, the dependence p<sub>H</sub>(T) experiences a minimum at T = 80-100 K depending on the spacer thickness, then increases at low temperatures more strongly when d<sub>s</sub> is smaller, and reaches a giant value p<sub>H</sub> = (1-2) × 10<sup>13</sup> cm<sup>-2</sup>. The obtained results are interpreted in the terms of magnetic proximity effect of the DL on the QW, inducing spin polarization of the holes in the QW. Strong structural and magnetic disorder in the DL and in the QW, leading to phase segregation in them is taken into consideration. The high p<sub>H</sub> value is explained as a result of the compensation of the positive normal Hall effect component by the negative anomalous Hall effect component.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C63H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Effet Hall</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Hall effect</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Dopage plan</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Planar doping</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Doping plano</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Addition manganèse</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Manganese additions</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Ferromagnétisme</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Ferromagnetism</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Point Curie</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Curie point</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Transition magnétique</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Magnetic transitions</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Ségrégation</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Segregation</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Séparation phase</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Phase separation</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Polarisation spin</s0><s5>11</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Spin polarization</s0><s5>11</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Polarización spin</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Percolation</s0><s5>12</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Percolation</s0><s5>12</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Gallium Indium Arséniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>13</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Gallium Indium Arsenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>13</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>13</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Effet Hall anormal</s0><s5>14</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Anomalous Hall effect</s0><s5>14</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Arséniure de gallium</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>16</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Heterostructures</s0><s5>16</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Puits quantique</s0><s5>17</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Quantum wells</s0><s5>17</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>GaAs</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>InxGa1-xAs</s0><s4>INC</s4><s5>53</s5></fC03><fN21><s1>254</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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